Raju, AR and Sardar, Kripasindhu and Rao, CNR (2001) Preparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysis. In: Materials Science in Semiconductor Processing, 4 (6). pp. 549-553.
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Thin films of GaN, InGaN, AlGaN and AlN on Si(100) as well as on $Al_2O_3$(0001) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on $Al_2O_3$ are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit|
|Date Deposited:||07 Aug 2008|
|Last Modified:||19 Sep 2010 04:48|
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