Vargheese, Deenamma K and Rao, Mohan G (2000) Sputtered flux distribution on the substrate in electron cyclotron resonance sputtering simulation and experimental study. In: Journal of Applied Physics, 87 (10). pp. 7544-7550.
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Electron cyclotron resonance plasma based sputtering is characterized by low pressure operation with high ion density. The distribution of sputtered flux on the substrate at different pressures and target–substrate distances has been simulated using Monte Carlo methods and compared with experimental results. It has been shown that due to cylindrical geometry of the target, at low pressures, the variation as a function of distance is different from conventional sputtering. At high pressures, however, the uniformity of sputtered flux increases with the target–substrate distance. Using the simulated data the variation of the thickness with sputtering pressure and target–substrate distance has been studied.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||13 Aug 2008|
|Last Modified:||19 Sep 2010 04:49|
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