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Annealing effect on structural and optical properties of diluted magnetic semiconducting $Zn_{1-x}Mn_xS$ nanostructured films

Reddy, Sreekantha D and Reddy, Maheswara M and Kang, Byeongwon and Yu, Seong-Cho and Rao, Narasimha K and Gunasekhar, KR and Reddy, BK and Reddy, Sreedhara P (2008) Annealing effect on structural and optical properties of diluted magnetic semiconducting $Zn_{1-x}Mn_xS$ nanostructured films. In: Solid State Sciences, 10 (8). pp. 1068-1073.

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Abstract

Nanostructured $Zn_{1-x}Mn_xS$ films $(0 \leq x \leq 0.25)$ were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K and the films were annealed at 573 K for 2 h in a vacuum of $2 \times 10^{-6} mbar$. All the deposited films were characterized by chemical, structural, morphological, optical and photoluminescence studies. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) studies showed that all the films investigated were in nanocrystalline form with the particle size lying in the range 10-25 nm. All the films exhibited cubic structure and the lattice parameter varied linearly with composition. The $Zn_{1-x}Mn_xS$ films showed an absorption coefficient $> 10^4 cm^{-1}$ with the energy band gap 3.44-4.04 eV measured at room temperature. The nanostructured $Zn_{0.90}Mn_{0.10}S$ films exhibit high photoluminescence intensity at room temperature.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Diluted magnetic semiconductors (DMS);Zn1-xMnxS nanocrystalline films;thermal evaporation technique;structural;optical;photoluminescence properties.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 21 Oct 2008 07:08
Last Modified: 19 Sep 2010 04:51
URI: http://eprints.iisc.ernet.in/id/eprint/16166

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