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Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire Transistor

Ray, Biswajit and Mahapatra, Santanu (2008) Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire Transistor. In: IEEE Transactions on Electron Devices, 55 (9). pp. 2409-2416.

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Abstract

A new physically based classical model for the potential distribution of an undoped body cylindrical gate-all-around nanowire transistor is proposed. The model is based on the analytical solution of 2-D Poisson's equation in a cylindrical coordinate system and is valid for both 1) weak and strong inversion regimes, 2) long and short-channel transistors, and 3) body surfaces and centers. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body radii pass through a single common point (termed a "crossover point"). It is found that, at this crossover point, there is no potential drop ("pseudo flatband condition") along the radial direction. Using the concept of crossover point, the effect of body radius on the threshold voltage of undoped body multigate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects, the effective subthreshold slope factor is mainly dictated by the potential at the body center rather than that at the surface. All the models are validated against a professional numerical device simulator.

Item Type: Journal Article
Additional Information: Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Gate all around (GAA);multigate transistor;short-channel effects (SCE);subthreshold slope;undoped body;virtual cathode.
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Date Deposited: 31 Oct 2008 06:51
Last Modified: 19 Sep 2010 04:51
URI: http://eprints.iisc.ernet.in/id/eprint/16220

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