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Composition dependent electrical switching in $Ge_xSe_{35−x}Te_{65} (18 \leq \times \leq 25)$ glasses – the influence of network rigidity and thermal properties

Prashanth, Bhanu SB and Asokan, S (2008) Composition dependent electrical switching in $Ge_xSe_{35−x}Te_{65} (18 \leq \times \leq 25)$ glasses – the influence of network rigidity and thermal properties. In: Solid State Communications, 147 (11-12). pp. 452-456.

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Abstract

Electrical switching investigations and supportive thermal studies have been undertaken on semiconducting chalcogenide $Ge_xSe_{35−x}Te_{65} (18 \leq \times \leq 25)$ glasses prepared in bulk form. An interesting composition dependent change (memory to threshold) has been observed in the switching behavior of these glasses across the stiffness/rigidity percolation threshold (RPT) at x=20 ( r =2.40). Also, the rigid $Ge_xSe_{35−x}Te_{65}$ glasses are found to retain the threshold behavior for hundreds of switching cycles. Further, the switching voltage of $Ge_xSe_{35−x}Te_{65}$ glasses has been found to exhibit an abrupt increase at the RPT.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier
Keywords: Disordered systems;Electrical switching;Alternating DSC
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 27 Nov 2008 10:39
Last Modified: 19 Sep 2010 04:51
URI: http://eprints.iisc.ernet.in/id/eprint/16273

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