# Composition dependent electrical switching in $Ge_xSe_{35-x}Te_{65} (18 \leq x \leq 25)$ glasses - the influence of network rigidity and thermal properties

Prashanth, Bhanu SB and Asokan, S (2008) Composition dependent electrical switching in $Ge_xSe_{35-x}Te_{65} (18 \leq x \leq 25)$ glasses - the influence of network rigidity and thermal properties. In: Solid State Communications, 147 (11-12). pp. 452-456.

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## Abstract

Electrical switching investigations and supportive thermal studies have been undertaken on semiconducting chalcogenide $Ge_xSe_{35-x}Te_{65} (18 \leq x \leq 25)$ glasses prepared in bulk form. An interesting composition dependent change (memory to threshold) has been observed in the switching behavior of these glasses across the stiffness/rigidity percolation threshold (RPT) at x = 20 (<r> = 2.40). Also, the rigid $Ge_xSe_{35-x}Te_{65}$ glasses are found to retain the threshold behavior for hundreds of switching cycles. Further, the switching voltage of $Ge_xSe_{35-x}Te_{65}$ glasses has been found to exhibit an abrupt increase at the RPT. Alternating Differential Scanning Calorimetric studies indicate that the $Ge_xSe_{35-x}Te_{65}$ glasses with higher tellurium concentrations exhibit two crystallization exotherms, which coalesce at the composition x = 20.5 (average coordination <r> = 2.41), which also marks the beginning of melting endotherms. The relatively low crystallization temperature $(T_{c1})$, along with the floppy structural network aids easy phase change in $Ge_xSe_{35-x}Te_{65}$ glasses with x < 20, causing them to exhibit memory switching. The moderately higher crystallization temperature $(300-330^o C)$ and the stabilizing influence of network connectivity & rigidity are plausibly responsible for the threshold behavior seen in the rigid $Ge_xSe_{35-x}Te_{65}$ glasses.

Item Type: Journal Article Publisher Copyright of this article belongs to Elsevier. Disordered systems;Electrical switching;Alternating DSC. Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) 17 Nov 2008 05:19 19 Sep 2010 04:51 http://eprints.iisc.ernet.in/id/eprint/16306