Bharadwaja, SSN and Krupanidhi, SB (2001) Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric $PbZrO_3$ thin films. In: Journal of Applied Physics, 89 (8). pp. 4541-4547.
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Antiferroelectric materials ~example: lead zirconate and modified lead zirconate stannate!, in which a field-induced ferroelectric phase transition is feasible due to a small free energy difference between the ferroelectric and the antiferroelectric phases, are proven to be very good candidates fo rapplications involving actuation and high charge storage devices. The property of reverse switching from the field-induced ferroelectric to antiferroelectric phases is studied as a function of temperature, applied electric field, and sample thickness in antiferroelectric lead zirconate thin films deposited by pulsed excimer laser ablation. The maximum released charge density was $22 \mu C/cm2$from a stored charge density of $36 \mu C/cm^2$ in a $0.55 \mu$ thick lead zirconate thin film. This indicated that more than 60% of the stored charge could be released in less than 7 ns at room temperature for a field of 200 kV/cm. The content of net released charge was found to increase with increasing field strength, whereas with increasing temperature the released charge was found to decrease. Thickness-dependent studies on lead zirconate thin films showed that size effects relating to extrinsic and intrinsic pinning mechanisms controlled the released and induced charges through the intrinsic switching time. These results proved that antiferroelectric PZ thin films could be utilized in high-speed charge decoupling capacitors in microelectronics applications.
|Item Type:||Journal Article|
|Additional Information:||Copyright belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||05 Dec 2008 06:27|
|Last Modified:||01 Jul 2011 06:56|
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