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Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method

Sardar, Kripasindhu and Raju, AR and Subbanna, GN (2003) Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method. In: Solid State Communications, 125 (6). pp. 355-358.

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Abstract

Thin films of GaN have been successfully deposited on Al2O3 (0001) substrates by the sol-gel technique. The method, in addition to being is simple and cost-effective, results in epitaxial films. The films have been characterized by photoluminescence spectroscopy.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: semiconductors;thin films;chemical synthesis;luminescence.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 15 Jul 2009 11:12
Last Modified: 19 Sep 2010 04:54
URI: http://eprints.iisc.ernet.in/id/eprint/16880

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