Sardar, Kripasindhu and Raju, AR and Subbanna, GN (2003) Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method. In: Solid State Communications, 125 (6). pp. 355-358.
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Thin films of GaN have been successfully deposited on Al2O3 (0001) substrates by the sol-gel technique. The method, in addition to being is simple and cost-effective, results in epitaxial films. The films have been characterized by photoluminescence spectroscopy.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||semiconductors;thin films;chemical synthesis;luminescence.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Solid State & Structural Chemistry Unit
|Date Deposited:||15 Jul 2009 11:12|
|Last Modified:||19 Sep 2010 04:54|
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