Sardar, K and Raju, AR and Bansal, B and Venkataraman, V and Rao, CNR (2003) Magnetic, optical and transport properties of GaMnN films. In: Solid State Communications, 125 (1). pp. 55-57.
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GaMnN films with 1-3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic T-C increases with the Mn content, with the 3% Mn film showing a T-C of similar to250 K. Anomalous Hall effect is observed below T-C where the films exhibit a small negative magnetoresistance.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science|
|Keywords:||Thin films;A. Magnetic films and multilayers;A. Semiconductors;D. Electronic transport;E. Luminescence.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||23 Nov 2009 06:44|
|Last Modified:||19 Sep 2010 04:55|
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