ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Monte Carlo analysis of the implant dose sensitivity in 0.1 &#u00B5;m NMOSFET

Srinivasaiah, HC and Bhat, Navakanta (2003) Monte Carlo analysis of the implant dose sensitivity in 0.1 &#u00B5;m NMOSFET. In: Solid-State Electronics, 47 (8). pp. 1379-1383.

[img] PDF
sdarticle39.pdf - Published Version
Restricted to Registered users only

Download (185Kb) | Request a copy
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...

Abstract

Statistical modeling for 0.1 mum NMOSFET has been performed for important device parameters through design of experiment with respect to implant dose parameters. The model has been validated through a comparison between rigorous Monte Carlo (MC) process simulation and MC calculations from these models. Mean and variances of evice characteristics such as drive current (I-on), leakage current (I-off), subthreshold slope (SS) and threshold voltage (V-t) have been determined from the MC data from both the process simulation and the model equations. Also transmission of moments technique is applied on these models to verify the quantities that have been determined rigorously by MC technique.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science
Keywords: Monte Carlo analysis;Transmission of moments;Disposable spacer technique;Statistical modeling; Design of experiment; 0.1 lm CMOS.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 24 Nov 2009 06:00
Last Modified: 19 Sep 2010 04:55
URI: http://eprints.iisc.ernet.in/id/eprint/17141

Actions (login required)

View Item View Item