Srinivasaiah, HC and Bhat, Navakanta (2003) Monte Carlo analysis of the implant dose sensitivity in 0.1 &#u00B5;m NMOSFET. In: Solid-State Electronics, 47 (8). pp. 1379-1383.
sdarticle39.pdf - Published Version
Restricted to Registered users only
Download (185Kb) | Request a copy
Statistical modeling for 0.1 mum NMOSFET has been performed for important device parameters through design of experiment with respect to implant dose parameters. The model has been validated through a comparison between rigorous Monte Carlo (MC) process simulation and MC calculations from these models. Mean and variances of evice characteristics such as drive current (I-on), leakage current (I-off), subthreshold slope (SS) and threshold voltage (V-t) have been determined from the MC data from both the process simulation and the model equations. Also transmission of moments technique is applied on these models to verify the quantities that have been determined rigorously by MC technique.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science|
|Keywords:||Monte Carlo analysis;Transmission of moments;Disposable spacer technique;Statistical modeling; Design of experiment; 0.1 lm CMOS.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||24 Nov 2009 06:00|
|Last Modified:||19 Sep 2010 04:55|
Actions (login required)