Dhananjay, * and Nagaraju, J and Choudhury, PR and Krupanidhi2, SB (2006) Growth of ferroelectric Li-doped ZnO thin films for metal ferroelectric-semiconductor FET. In: Journal Of Physics D-Applied Physics, 39 (13). pp. 2664-2669.
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A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn1-xLixO, x = 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 degrees C and 100 mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250-373 K. A dielectric anomaly was observed at 360 K. The capacitance-voltage characteristics of Ag/Zn0.75Li0.25O/Si exhibited clockwise hysteresis loops with a memory window of 2V. The films deposited at 100 mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09 mu C cm(-2) and coercive field of 25 kV cm(-1). Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn0.75Li0.25O thin films were studied in the wavelength range 300-900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Iop Publishing Ltd.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Chemical Sciences > Materials Research Centre
|Date Deposited:||25 Mar 2009 05:05|
|Last Modified:||19 Sep 2010 04:56|
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