Kumar, R Anil and Suresh, MS and Nagaraju, J (2005) Silicon (BSFR) solar cell AC parameters at different temperatures. In: Solar Energy Materials & Solar Cells, 85 (3). pp. 397-406.
sdarticle.pdf - Published Version
Restricted to Registered users only
Download (257Kb) | Request a copy
The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348 K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28 muH) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Silicon (BSFR) solar cell;AC parameters;Temperature;Diffusion capacitance;Dynamic resistance.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||08 Jan 2010 07:41|
|Last Modified:||19 Sep 2010 04:56|
Actions (login required)