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Transmission electron microscopy and high-resolution transmission electron microscopy study of nanostructure and metastable phase evolution in pulsed-laser-ablation-deposited Ti-Si thin film

Bysakh, S and Mitsuishi, K and Song, M and Furuya, K and Chattopadhyay, K (2004) Transmission electron microscopy and high-resolution transmission electron microscopy study of nanostructure and metastable phase evolution in pulsed-laser-ablation-deposited Ti-Si thin film. In: Journal Of Materials Research, 19 (4). pp. 1118-1125.

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Abstract

Thin films with a nominal composition close to Ti62.5Si37.5 were deposited on NaCl substrate at room temperature by pulsed laser ablation to study the evolution of the intermetallic compound Ti5Si3 using a combination of high-resolution and in situ transmission electron microscopy. The as-deposited amorphous films contain Ti-rich clusters, which influence the phase evolution and the decomposition behavior of the amorphous film. These clusters influence the nucleation of a metastable fee Ti solid solution (a(o) = 0.433 nm) with composition richer in Ti than Ti62.5Si37.5 as the first phase to crystallize at 773 K. The Ti5Si3, nanocrystals form later, and even at 1073 K they coexist with fine fee Ti-rich nanocrystals. Subsequent Ar+ ion-milling of the crystallized film results in a loss of silicon. The composition change leads to the dissolution of the Ti5Si3, nanocrystals and evolution of a new metastable Ti-rich fee phase (a(o) = 0.408 nm).

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Materials Research Society.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 19 Dec 2008 18:58
Last Modified: 19 Aug 2011 11:08
URI: http://eprints.iisc.ernet.in/id/eprint/17362

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