Hudai, MK and Krupanidhi, SB (1999) Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes. In: Solid-State Electronics, 43 (12). pp. 2135-2139.
art.pdf - Published Version
Restricted to Registered users only
Download (140Kb) | Request a copy
The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Si-doped n-GaAs were measured in the doping range of 6 x 10(15)-1.5 x10(18) cm(-3). These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons, The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors. (C) 1999 Elsevier Science Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science Ltd.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||27 Feb 2009 11:23|
|Last Modified:||19 Sep 2010 04:59|
Actions (login required)