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High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Parthiban, S and Gokulakrishnan, V and Ramamurthi, K and Elangovan, E and Martins, R. and Fortunato, E and Ganesan, R (2009) High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications. In: Solar Energy Materials and Solar Cells, 93 (1). pp. 92-97.

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Abstract

Molybdenum-doped indium oxide (IMO) thin films were deposited at 450 °C for varying molybdenum concentrations in the range of 0.5–2 at% by the spray pyrolysis technique. These films confirmed the cubic bixbyite structure of polycrystalline In2O3. The preferred growth orientation along the (2 2 2) plane shifts to (4 0 0) on higher Mo doping levels. The films doped with 0.5 at% Mo showed high mobility of 76.9 cm2/(V s). The high visible transmittance extends well into the near-infrared region. A possibility of using the produced IMO films in nanocrystalline (nc) silicon solar cell applications is discussed in this article. The morphological studies showed a change in the microstructure, which is consistent with the change in crystallographic orientation.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Near-infrared transparency; Charge carrier mobility; Molybdenum-doped indium oxide thin films; Wide band gap
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 14 Sep 2009 09:50
Last Modified: 19 Sep 2010 05:00
URI: http://eprints.iisc.ernet.in/id/eprint/18118

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