ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped $SnO{_2}$ thin films from $SnCl{_2}$ precursor

Thangaraju, B (2002) Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped $SnO{_2}$ thin films from $SnCl{_2}$ precursor. In: Thin Solid Films, 402 (1-2). pp. 71-78.

[img]
Preview
PDF
Structural.pdf - Published Version

Download (138Kb)
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...

Abstract

Tin oxide thin films doped with fluorine, antimony and both have been prepared by spray pyrolysis from SnCl2 precursor. The respective deposition temperatures of SnO2:F, SnO2:Sb and SnO2:(F+Sb) are 400 degreesC, 350 degreesC and 375 degreesC. The as-prepared films are polycrystalline with a tetragonal crystal structure. The lattice parameter values are not changed by the addition of dopants. The films are preferentially oriented along the (200) direction. The grain sizes vary between 200 and 650 Angstrom. The films have moderate optical transmission (up to 70% at 800 nm) and the calculated reflectivity in the infra-red region is in the range of 88-95%. The figure of merit (phi) values of SnO2:F and SnO2:Sb samples are 2.5 X 10(-3) (Ohm)(-1) and 1.4 X 10(-4) (Ohm)(-1), respectively. The films are heavily doped, degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R-sh) of 5.65 Ohm/square obtained for a SnO2:F sample, is even lower than the values reported for the spray deposited tin oxide thin films prepared from SnCl2 precursor. The resistivity (rho) and mobility (mu) are in the range of 10(-4)-10(-3) Ohm-cm and 7-17.2 cm(2) V-1 s(-1). The electron density lies between 1.3 X 10(20) and 13.2 X 10(20) cm(-3). A thorough electrical investigation reveals that the film's conductivity depends only on carrier concentration. It is found that ionised impurity scattering is the dominant mechanism, which limits the mobility of the carriers.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Nov 2009 08:31
Last Modified: 19 Sep 2010 05:00
URI: http://eprints.iisc.ernet.in/id/eprint/18194

Actions (login required)

View Item View Item