Ghosh, Arindam and Raychaudhuri, AK (1999) Conductance fluctuations near the Anderson transition. In: Journal of Physics-Condensed Matter, 11 (41). L457-L462.
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In this letter we report measurements of conductance fluctuations in single-crystal samples of Si doped with P and B close to the critical composition of the metal-insulator transition (n(c) approximate to 4 x 10(18) cm(-3)). The measurements show that the noise, which arises from bulk sources, does not diverge as the loffe-Regal limit (k(F)l --> 1) is approached from the metallic side. At room temperature, the magnitude of the noise shows a shallow maximum at around k(F)l approximate to 1.5 and drops sharply as the insulating state is approached.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to IOP Publishing.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||05 Mar 2009 05:06|
|Last Modified:||19 Sep 2010 05:00|
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