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Conductance fluctuations near the Anderson transition

Ghosh, Arindam and Raychaudhuri, AK (1999) Conductance fluctuations near the Anderson transition. In: Journal of Physics-Condensed Matter, 11 (41). L457-L462.

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Official URL: http://www.iop.org/EJ/article/0953-8984/11/41/102/...

Abstract

In this letter we report measurements of conductance fluctuations in single-crystal samples of Si doped with P and B close to the critical composition of the metal-insulator transition (n(c) approximate to 4 x 10(18) cm(-3)). The measurements show that the noise, which arises from bulk sources, does not diverge as the loffe-Regal limit (k(F)l --> 1) is approached from the metallic side. At room temperature, the magnitude of the noise shows a shallow maximum at around k(F)l approximate to 1.5 and drops sharply as the insulating state is approached.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IOP Publishing.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 05 Mar 2009 05:06
Last Modified: 19 Sep 2010 05:00
URI: http://eprints.iisc.ernet.in/id/eprint/18249

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