Magnetic and transport properties, and electronic structure of the layered chalcogenide $AgCrSe{_2}$

Gautam, Ujjal K and Seshadri, Ram and Vasudevan, S and Maignan, A (2002) Magnetic and transport properties, and electronic structure of the layered chalcogenide $AgCrSe{_2}$. In: Solid State Communications, 122 (11). pp. 607-612.

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Abstract

We report a detailed study of the magnetic and transport properties of polycrystalline A-CrSe2, a layered magnetic chalcogenide that orders antiferromagnetically without frustration at 55 K. The magnetic ordering corresponds to ill-plane ferromagnetic interactions with anti ferromagnetic coupling between the planes. Transport studies suggest a semiconductor that is at the I-M transition boundary in terms of its resistivity, with variable-range hopping behavior at intermediate temperatures and Efros-Shklovskii hopping at low temperatures. At high temperatures (>340 K) the temperature coefficient of resistance turns positive as a result, we believe, of disorder in the silver sub-lattice. First principles density functional calculations of the electronic structure suggest a magnetic insulator ground state, and means to tune the system to ferromagnetic half-metal.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	A.AgCrSe2;Antiferromagnetics;Magnetic semiconductors; Low-dimensional electronic structure.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Chemical Sciences > Inorganic & Physical Chemistry
Date Deposited:	20 Nov 2009 08:43
Last Modified:	19 Sep 2010 05:01
URI:	http://eprints.iisc.ernet.in/id/eprint/18353

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