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Growth of InBixSb(1-x) films on GaAs(0 0 1) substrates using liquid phase epitaxy and their characterization

Dixit, VK and Keerthi, KS and Bera, P and Bhat, HL (2002) Growth of InBixSb(1-x) films on GaAs(0 0 1) substrates using liquid phase epitaxy and their characterization. In: Journal of Crystal Growth, 241 (1-2). pp. 171-176.

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Abstract

The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at I put resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9.2 x 10(16)/cm(3) and the Hall mobility is 3.54 x 10(4) cm(2)/V s at 300 K. The room temperature hand gap has been found to be in the range of 0.134-0.140eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Infrared Photodetectors;Room-Temperature;Crystals;Insbbi
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 23 Jul 2009 07:34
Last Modified: 19 Sep 2010 05:01
URI: http://eprints.iisc.ernet.in/id/eprint/18398

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