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Effective mass measurement in two-dimensional hole gas in strained $Si_{1-x-y}Ge_xC_y/ Si$(100) modulation doped heterostructures

Chang, CL and Shukla, SP and Pan, W and Venkataraman, V and Sturm, JC and Shayegan, M (1998) Effective mass measurement in two-dimensional hole gas in strained $Si_{1-x-y}Ge_xC_y/ Si$(100) modulation doped heterostructures. In: Thin Solid Films, 321 (1-2). pp. 51-54.

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Abstract

A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) substrate has been demonstrated at temperatures from 0.3 to 300 K. The hole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependence of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does nor change the effective mass of holes in Si1-xGex. It suggests that the valence band structure of Si1-x-yGexCy is similar to that of Si1-xGex.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: mass measurement; 2D hole gas; Si(100).
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 02 Jun 2009 10:35
Last Modified: 19 Sep 2010 05:01
URI: http://eprints.iisc.ernet.in/id/eprint/18434

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