Devika, M and Reddy, N Koteeswara and Patolsky, F and Gunasekhar, KR (2008) Ohmic contacts to SnS films: Selection and estimation of thermal stability. In: Journal of Applied Physics, 104 (12). 124503-1-124503-6.
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Selection of Ohmic contacts to SnS films is one of the crucial tasks for the fabrication of efficient SnS devices. Thus, we examined different nonalloyed metallization schemes, namely, Ag, Al, In, and Sn to SnS films since their Fermi level pins exactly in between the conduction and valance bands of SnS. To explore the Ohmic behavior of M/SnS (M=Ag, Al, In, Sn) structures, the electrical properties of as-grown structures have been studied at different temperatures. From these studies it is noticed that at room temperature all M/SnS structures, except Ag/SnS, have an excellent Ohmic behavior over the voltage range from −10 to 10 V. However, Ag/SnS structures showed Ohmic trend only in the voltage range of ±6 V. The stability of the M/SnS structures was also examined by annealing them at different temperatures (300–500 °C) and the obtained peculiar results are reported.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Keywords:||aluminium;annealing;conduction bands;Fermi level;indium; IV-VI semiconductors; metallisation;ohmic contacts; semiconductor device metallisation; semiconductor thin films; silver; thermal stability; tin; tin compounds; valence bands.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||06 Nov 2009 04:18|
|Last Modified:||19 Sep 2010 05:24|
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