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CV studies on metal-ferroelectric bismuth vanadate $(Bi{_2}VO{_5}.{_5})$ semiconductor structure

Kumari, Neelam and Parui, Jayanta and Varma, KBR and Krupanidhi, SB (2006) CV studies on metal-ferroelectric bismuth vanadate $(Bi{_2}VO{_5}.{_5})$ semiconductor structure. In: Solid State Communications, 137 (10). pp. 566-569.

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Abstract

Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been successfully grown on p-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The crystalline nature of the films has been studied by X-ray diffraction (XRD). Atomic force microscopy (AFM) was used to study the microstructure of the films. The dielectric properties of the films were studied. The capacitance-voltage characteristics have been studied in metal-ferroelectric-insulator-semiconductor (MFIS) configuration. The dielectric constant of BVO thin films formed on Si(100) is about 146 measured at a frequency of 100 kHz at room temperature. The capacitance-voltage plot of a Bi2VO5.5 MFIS capacitor subjected to a dc polarizing voltages shows a memory window of 1.42 V during a sweep of +/- 5V gate bias. The flatband voltage (V-f) shifts towards the positive direction rather than negative direction. This leads to the asymmetric behavior of the CV curve and decrease in memory window. The oxide trap density at a ramp rate of 0.2 V/s was estimated to be as high as 1.45 x 10(12) cm(-2).

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsavier.
Keywords: A. Bi2VO5.5 thin films; A. MFS structure; D. Chemical solution decomposition; D. Capacitance–voltage characteristics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 18 Mar 2009 11:27
Last Modified: 19 Sep 2010 05:25
URI: http://eprints.iisc.ernet.in/id/eprint/18734

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