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OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge

Modak, Prasanta and Hudait, Mantu Kumar and Hardikar, Shyam and Krupanidhib, SB (1998) OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge. In: Journal of Crystal Growth, 193 (04). pp. 501-509.

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Official URL: http://adsabs.harvard.edu/abs/1998JCrGr.193..501M

Abstract

Low-pressure organometallic vapor-phase epitaxial (LP-OMVPE) growth of undoped and Si-doped GaAs on Ge was carried out with a variation in growth temperature and growth rate. In the case of undoped and Si-doped GaAs, etch patterns showed that the epilayers consist of a single domain. Double crystal X-ray diffraction (DCXRD) indicated the compressive GaAs and the full-width at half-maxima for Si-doped GaAs decreased with increasing growth temperature. The 4.2 K photoluminescence (PL) spectrum of the undoped GaAs showed an acceptor bound excitonic peak (A(0)X transition) at 1.5125 eV and the Si-doped GaAs showed two hole transitions of Si accepters at 1.4864 eV along with the excitonic peak at 1.507 eV. This indicated the absence of Ge related peaks, i.e., (e-Ge-As(0)) transitions. The electrochemical capacitance voltage profiler showed that the Si-doping efficiency for GaAs on Ge was less than that in GaAs on GaAs. The profiler revealed an npn structure in both the cases where the p region was in GaAs. The secondary ion mass spectroscopy (SIMS) results qualitatively indicated the absence of outdiffusion of Ge into GaAs.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: GaAs;Ge;OMVPE;heteroepitaxy.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 24 Dec 2009 08:44
Last Modified: 19 Sep 2010 05:26
URI: http://eprints.iisc.ernet.in/id/eprint/19032

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