Mamiya, K and Mizokawa, T and Fujimori, A and Miyadai, T and Chandrasekharan, N and Krishnakumar, SR and Sarma, DD and Takahashi, H and Môri, N and Suga, S (1998) Photoemission study of the metal-insulator transition in NiS2-xSex. In: Physical Review B: Condensed Matter, 58 (15). pp. 9611-9614.
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We have studied the electronic structure of NiS2-xSex, which undergoes a metal-insulator transition as functions of composition x and temperature, by means of photoemission and inverse-photoemission spectroscopy. Spectral changes across the transition near the Fermi level (E-F) (particularly within similar to 100 meV of E-F) have been interpreted as due to a "semimetallic" closure of the band gap in going from the insulating phase to the antiferromagnetic metallic phase. On the other hand, there is also composition- and temperature-dependent spectral weight transfer over a wider energy range of similar to 0.5-1 eV, indicating significant correlation effects. Photoemission intensity just below EF remains high in the insulating phases, indicating that the carrier number is large at high temperatures and that the activation-type transport is due to the activated mobility rather than the activated carrier number.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit|
|Date Deposited:||24 Dec 2009 11:30|
|Last Modified:||19 Sep 2010 05:26|
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