Ramesh, K and Asokan, S and Sangunni, KS and Gopal, ESR (1999) Electrical resistivity behaviour of Ag-Ge-Te glasses under pressure at different temperatures: the influence of bonding and topological thresholds. In: Journal of Physics Condensed Matter, 11 (19). pp. 3897-3906.
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The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a function of pressure at different temperatures in a Bridgman anvil set-up. The samples are found to exhibit a continuous decrease in electrical resistivity with pressure and metallization around 5 GPa. The pressure dependence of conductivity activation energy (Delta E) also confirms the continuous metallization of AgxGe15Te85-x glasses. The variation of Delta E with composition at different pressures has been found to exhibit anomalies at x = 5 and x = 18.5. A plausible explanation based on the bonding considerations, topological thresholds and density variations with composition has been provided to understand the conductivity activation energy of Ag-Ge-Te and other chalcogenide glasses.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||02 Jun 2009 12:21|
|Last Modified:||19 Sep 2010 05:26|
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