Ray, Biswajit and Mahapatra, Santanu (2009) Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor. In: IEEE Transactions on Electron Devices, 56 (2). pp. 260-266.
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A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.
|Item Type:||Journal Article|
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|Keywords:||Compact model;device stimulator;double-gate (DG);Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET);Poisson's equation; short-channel effect (SCE);subthreshold slope.|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||30 Oct 2009 11:13|
|Last Modified:||19 Sep 2010 05:27|
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