Balasubramanian, S and Venkataraman, V (1996) Valley splitting in Si/Si1-xGex heterostructures. In: Solid State Communications, 100 (07). pp. 525-528.
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Abstract
We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | semiconductors;heterojunctions;electronic states (localized). |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 12 Jan 2010 11:28 |
| Last Modified: | 19 Sep 2010 05:27 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/19240 |
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