Chainani, A and Sarma, DD and Das, I and Sampathkumaran, EV (1996) Low-temperature electrical conductivity of LaNi1-xFexO3. In: Journal of Physics-Condensed Matter, 8 (43). L631-L636.
c643l1.pdf - Published Version
Restricted to Registered users only
Download (104Kb) | Request a copy
We report the electrical conductivity between 2 and 300 K for LaNi1-xFexO3 across the composition-controlled metal-insulator (m-i) transition. Using a method first suggested by Mobius, we identify the critical concentration x(c) to be 0.3 for the m-i transition. The negative temperature coefficient of resistivity observed at low temperatures in the metallic phase follows a temperature dependence characteristic of disorder effects. The semiconducting compositions (x greater than or equal to 0.3) do not show a simple activation energy but exhibit variable-range hopping at high temperatures confirming that the m-i transition in this system is driven by increasing disorder effects.
|Item Type:||Editorials/Short Communications|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit|
|Date Deposited:||12 Jan 2010 11:43|
|Last Modified:||19 Sep 2010 05:27|
Actions (login required)