Bhattacharya, S and Sarkar, R and Devaprakasam, D and Mukherjee, S and Pahari, S and Saha, A and Roy, S and Paul, NC and Ghosh, S and Ghatak, KP (2009) Einstein Relation in n-Channel Inversion Layers of Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory, Relative Comparison and Suggestion for an Experimental Determination. In: Journal Of Computational And Theoretical Nanoscience, 6 (1). pp. 112-134.Full text not available from this repository.
In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Scientific Publishers.|
|Keywords:||Einstein Relation;Inversion Layers;Nonlinear Optical Materials;Experimental Determination|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||30 Apr 2009 05:28|
|Last Modified:||30 Apr 2009 05:28|
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