Naik, Gopalakrishna K and Rao, KSRK (2009) Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 404 (2). pp. 210-212.
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Low-temperature electroluminescence (EL) is observed in n-type modulation-doped AlGaAs/InGaAs/GaAs quantum well samples by applying a positive voltage between the semitransparent Au gate and alloyed Au–Ge Ohmic contacts made on the top surface of the samples. We attribute impact ionization in the InGaAs QW to the observed EL from the samples. A redshift in the EL spectra is observed with increasing gate bias. The observed redshift in the EL spectra is attributed to the band gap renormalization due to many-body effects and quantum-confined Stark effect.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Electroluminescence;Modulation doping;Quantum wells.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||03 Jun 2009 04:48|
|Last Modified:||19 Sep 2010 05:29|
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