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Electrical and mechanical properties of diluted magnetic semiconductor Zn1-xMnxS nanocrystalline films

Reddy, D Sreekantha and Kang, B and Yu, SC and Reddy, Y Dwarakanadha and Sharma, SK and Gunasekhar, KR and Rao, KN and Reddy, P Sreedhara (2009) Electrical and mechanical properties of diluted magnetic semiconductor Zn1-xMnxS nanocrystalline films. In: Current Applied Physics, 9 (2). pp. 431-434.

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Abstract

Nanostructured Zn1-xMnxS films (0 less-than-or-equals, slant x less-than-or-equals, slant 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2*10-6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young's modulus value ranging 69.7-94.2 GPa.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Diluted magnetic semiconductors; Zn1−xMnxS nanocrystalline films; Electrical properties; Mechanical properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 10 Sep 2009 09:52
Last Modified: 19 Sep 2010 05:30
URI: http://eprints.iisc.ernet.in/id/eprint/19816

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