Reddy, D Sreekantha and Kang, B and Yu, SC and Reddy, Y Dwarakanadha and Sharma, SK and Gunasekhar, KR and Rao, KN and Reddy, P Sreedhara (2009) Electrical and mechanical properties of diluted magnetic semiconductor Zn1-xMnxS nanocrystalline films. In: Current Applied Physics, 9 (2). pp. 431-434.
full.pdf - Published Version
Restricted to Registered users only
Download (131Kb) | Request a copy
Nanostructured Zn1-xMnxS films (0 less-than-or-equals, slant x less-than-or-equals, slant 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2*10-6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young's modulus value ranging 69.7-94.2 GPa.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Diluted magnetic semiconductors; Zn1−xMnxS nanocrystalline films; Electrical properties; Mechanical properties|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||10 Sep 2009 09:52|
|Last Modified:||19 Sep 2010 05:30|
Actions (login required)