Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN and Chandrasekharan, KS and Arora, BM (2002) High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy. In: Applied Physics Letters, 80 (12). pp. 2102-2104.
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has been achieved via traditional liquid-phase epitaxy. Scanning and transmission electron microscopy show sharp interfaces even at 35 nm resolution. High-resolution x-ray diffraction studies reveal reflections even up to 2 theta =153° with distinct layer and substrate peaks, indicating structural coherence. The films grown were n type and the highest electron mobility obtained was 3.963104 cm2/Vs at room temperature. The band gap varies from 0.17 to 0.23 eV in the temperature range of 300–10 K and is consistent with the expected variation. These results indicate that the films grown are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to American Institute of Physics (AIP).|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||27 Oct 2004|
|Last Modified:||19 Sep 2010 04:16|
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