Bhat, HL (1985) X-ray Topographic Assessment of Dislocations in Crystals Grown from Solution. In: Progress in Crystal Growth and Characterization of Materials, 11 (2). pp. 57-87.
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Crystals growing from solution, the vapour phase and from supercooled melt exhibit, as a rule, planar faces. The geometry and distribution of dislocations present within the crystals thus grown are strongly related to the growth on planar faces and to the different growth sectors rather than the physical properties of the crystals and the growth methods employed. As a result, many features of generation and geometrical arrangement of defects are common to extremely different crystal species. In this paper these commoner aspects of dislocation generation and configuration which permits one to predict their nature and distribution are discussed. For the purpose of imaging the defects a very versatile and widely applicable technique viz. x-ray diffraction topography is used. Growth dislocations in solution grown crystals follow straight path with strongly defined directions. These preferred directions which in most cases lie within an angle of ±15° to the growth normal depend on the growth direction and on the Burger's vector involved. The potential configuration of dislocations in the growing crystals can be evaluated using the theory developed by Klapper which is based on linear anisotropic elastic theory. The preferred line direction of a particular dislocation corresponds to that in which the dislocation energy per unit growth length is a minimum. The line direction analysis based on this theory enables one to characterise dislocations propagating in a growing crystal. A combined theoretical analysis and experimental investigation based on the above theory is presented.
|Item Type:||Journal Article|
|Additional Information:||The copyright of this article belongs to Elsevier Science.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||21 Oct 2009 12:03|
|Last Modified:||20 Mar 2014 04:34|
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