Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Bismuth-doped amorphous-germanium sulfidesemiconductors. In: Physical Review B, 34 (12). pp. 8786-8793.
a_1.pdf - Published Version
Restricted to Registered users only
Download (1476Kb) | Request a copy
A study of the effect of bismuth dopant on the electronic transport properties of the amorphous semiconductors Ge20S80-xBix under high pressure (up to 140 kbar) has been carried out down to liquid-nitrogen temperature. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy at all pressures and for all compositions. A remarkable resemblance between the electronic conduction process, x-ray diffraction studies, and differential thermal analysis results is revealed. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in germanium chalcogenides. The impurity-induced chemical modification of the network creates a favorable environment for such an interaction.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||28 May 2009 07:12|
|Last Modified:||19 Sep 2010 05:32|
Actions (login required)