Parthasarathy, G and Asokan, S and Naik, GM and Krishna, Rama R (1987) Pressure-Induced transitions in amorphous TlxSe100-x alloys. In: Philosophical Magazine Letters, 56 (5). pp. 191-195.
Full text not available from this repository. (Request a copy)Abstract
The electrical resistivity of bulk semiconducting amorphous TlxSe100-x alloys with 0 ≤ x ≤ 25 has been investigated up to a pressure of 14 GPa and down to liquidnitrogen temperature by use of a Bridgman anvil device. All the glasses undergo a discontinuous pressure-induced semiconducting-to-metal transition. X-ray diffraction studies on the pressure-recovered samples show that the high-pressure phase is the crystalline phase. The pressure-induced crystalline products are identified to be a mixture of Se having a hexagonal structure with a = 4·37 Aring and c = 4·95 Aring and TlSe having a tetragonal structure with a = 8·0 Aring and c = 7·0 Aring
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Taylor and Francis Group. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) |
| Date Deposited: | 12 Jan 2010 09:06 |
| Last Modified: | 22 Oct 2010 10:20 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/20335 |
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