Ramkumar, K and Satyam, M (1987) Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation. In: International Journal of Electronics, 63 (4). 541 -551.
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This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the transportation and storage of majority carriers in the base region. Using this analysis one can compute all the voltage-current characteristics of a transistor under avalanche breakdown.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copy right of this article belongs to Taylor and Francis Group |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 29 May 2009 05:17 |
| Last Modified: | 29 May 2009 05:17 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/20509 |
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