Ramkumar, K and Satyam, M (1987) Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation. In: International Journal of Electronics, 63 (4). 541 -551.Full text not available from this repository. (Request a copy)
This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the transportation and storage of majority carriers in the base region. Using this analysis one can compute all the voltage-current characteristics of a transistor under avalanche breakdown.
|Item Type:||Journal Article|
|Additional Information:||Copy right of this article belongs to Taylor and Francis Group|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||29 May 2009 05:17|
|Last Modified:||29 May 2009 05:17|
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