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Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation

Ramkumar, K and Satyam, M (1987) Analysis of avalanche breakdown in bipolar transistors based on majority carrier transportation. In: International Journal of Electronics, 63 (4). 541 -551.

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Abstract

This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the transportation and storage of majority carriers in the base region. Using this analysis one can compute all the voltage-current characteristics of a transistor under avalanche breakdown.

Item Type: Journal Article
Additional Information: Copy right of this article belongs to Taylor and Francis Group
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 29 May 2009 05:17
Last Modified: 29 May 2009 05:17
URI: http://eprints.iisc.ernet.in/id/eprint/20509

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