ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Phonon renormalization in doped bilayer graphene

Das, A and Chakraborty, B and Piscanec, S and Pisana, S and Sood, AK and Ferrari, AC (2009) Phonon renormalization in doped bilayer graphene. In: Physical Review-B, 79 (15). pp. 155417-1.

[img] PDF
fulltext.pdf - Published Version
Restricted to Registered users only

Download (606Kb) | Request a copy
Official URL: http://scitation.aip.org/getabs/servlet/GetabsServ...

Abstract

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Physical Society.
Keywords: conduction bands; doping; graphene; phonons; Raman spectra; valence bands
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 03 Jan 2010 09:33
Last Modified: 19 Sep 2010 05:33
URI: http://eprints.iisc.ernet.in/id/eprint/20545

Actions (login required)

View Item View Item