Das, A and Chakraborty, B and Piscanec, S and Pisana, S and Sood, AK and Ferrari, AC (2009) Phonon renormalization in doped bilayer graphene. In: Physical Review-B, 79 (15). pp. 155417-1.
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We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society.|
|Keywords:||conduction bands; doping; graphene; phonons; Raman spectra; valence bands|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||03 Jan 2010 09:33|
|Last Modified:||19 Sep 2010 05:33|
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