Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) On the structural features of doped amorphous chalcogenide semiconductors. In: Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71.
![[img]](http://eprints.iisc.ernet.in/style/images/fileicons/application_pdf.png) |
PDF
http___www.sciencedirect.com_science__ob=MImg&_imagekey=B6TXM-48J4YS8-GK-1&_cdi=5594&_user=512776&_orig=search&_coverDate=09_30_1986&_sk=999139998&view=c&wchp=dGLzVtz-zSkzV&md5=8ff518c9e543726044.pdf - Published Version Restricted to Registered users only Download (302Kb) | Request a copy |
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...
Abstract
A study of Bi-doped amorphous (Ge42S58)100−xBix and Ge20S80−xBix has been carried out by differential thermal analysis (DTA) and X-ray diffraction methods so as to elucidate the impurity-induced modifications in the semiconductors. Thermal analysis reveals the presence of complex structural units in the modified material. An interesting feature of this study is the existence of a double glass transition in Ge20S80−xBix, which is reported for the first time in this system.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) |
| Date Deposited: | 05 Feb 2010 09:51 |
| Last Modified: | 19 Sep 2010 05:35 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/20944 |
Actions (login required)
 |
View Item |
