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On the structural features of doped amorphous chalcogenide semiconductors

Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) On the structural features of doped amorphous chalcogenide semiconductors. In: Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71.

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Abstract

A study of Bi-doped amorphous (Ge42S58)100−xBix and Ge20S80−xBix has been carried out by differential thermal analysis (DTA) and X-ray diffraction methods so as to elucidate the impurity-induced modifications in the semiconductors. Thermal analysis reveals the presence of complex structural units in the modified material. An interesting feature of this study is the existence of a double glass transition in Ge20S80−xBix, which is reported for the first time in this system.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 05 Feb 2010 09:51
Last Modified: 19 Sep 2010 05:35
URI: http://eprints.iisc.ernet.in/id/eprint/20944

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