Reddy, A Sivasankar and Park, Hyung-Ho and Rao, G Mohan and Uthanna, S and Reddy, P Sreedhara (2009) Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films. In: Journal of Alloys and Compounds, 474 (1-2). pp. 401-405.
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Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303–648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm−3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Thin films;CuAlO2;Transparent conducting oxides;Sputtering.|
|Department/Centre:||Division of Chemical Sciences > Sophisticated Instruments Facility|
|Date Deposited:||15 Jul 2009 06:37|
|Last Modified:||19 Sep 2010 05:36|
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