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Pressure induced polymorphous crystallization in bulk Ge20Te80 glass

Parthasarathy, G and Asokan, S and Gopal, ESR (1986) Pressure induced polymorphous crystallization in bulk Ge20Te80 glass. In: Physica A: Statistical Mechanics and its Applications, 139 (1-3). pp. 266-268.

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Abstract

The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with Image . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.

Item Type: Journal Article
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Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 29 Jan 2010 09:48
Last Modified: 12 Sep 2013 05:27
URI: http://eprints.iisc.ernet.in/id/eprint/21283

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