Parthasarathy, G and Asokan, S and Gopal, ESR (1986) Pressure induced polymorphous crystallization in bulk Ge20Te80 glass. In: Physica A: Statistical Mechanics and its Applications, 139 (1-3). pp. 266-268.
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The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with Image . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||29 Jan 2010 09:48|
|Last Modified:||12 Sep 2013 05:27|
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