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Kinetics of Chemical Vapor Deposition

Subrahmanyam, J and Lahiri, AK and Abraham, KP (1980) Kinetics of Chemical Vapor Deposition. In: Journal of Electrochemical Society, 127 (6). pp. 1394-1399.

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Abstract

A generalized mass transport model is developed for predicting the rate ofdeposition in chemical vapor deposition (CVD) systems. This combines thegeneralized method of obtaining equilibrium composition, with elemental fluxbalance expressions. This procedure avoids the usual problems encountered incalculating the rates in multicomponent systems, like writing overall reactionschemes. The dependence of multicomponent diffusivities on the fluxes is accountedin this model using an iterative procedure. The model developed isapplied to the deposition of titanium carbide on cemented carbide tool bitsfrom a gas mixture of titanium tetrachloride, toluene, and hydrogen. Experimentaldeposition rates were obtained using a thermogravimetric assembly.Mass transport controlled rates give an order of magnitude estimates of theobserved rates.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to the Electrochemical Society, Inc.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 27 Aug 2009 06:32
Last Modified: 19 Sep 2010 05:38
URI: http://eprints.iisc.ernet.in/id/eprint/21620

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