Kumar, Vikram and Indusekhar, H (1987) Electrical properties of nickel-related deep levels in silicon. In: Journal of Applied Physics, 61 (4). pp. 1449-1455.
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Electrically active deep levels related to nickel in silicon are studied under different diffusion conditions, quenching modes, and annealing conditions. The main nickel-related level is at Ev+0.32 eV. Levels at Ev+0.15 and Ev+0.54 eV are not related to nickel while those at Ev+0.50 and Ev+0.28 eV may be nickel related. Their concentrations depend on the quenching mode. There is no nickel-related level in the upper half of the band gap. The complicated annealing behavior of the main nickel-related level is explained on the basis of the formation and dissociation of a nickel-vacany complex. Journal of Applied Physics is copyrighted by The American Institute of Physics.
|Item Type:||Journal Article|
|Additional Information:||copy right of this article belongs to American Institute of Physics|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||31 Jul 2009 03:11|
|Last Modified:||19 Sep 2010 05:38|
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