Harshavardhan, Solomon K and Hegde, MS (1987) Origin of anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films. In: Physical Review Letters, 58 (6). 567- 570.
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Anomalous photoinduced transformations in amorphous Ge-based chalcogenide thin films are established as being due to photochemical modification of the surfaces, by photoemission studies. Mass measurements indicate that the giant thickness reduction on irradiation is predominantly due to the loss of material as a result of photogenerated volatile high vapor pressure oxide fractions on the surface. This extrinsic contribution contradicts the models of the phenomenon proposed so far, which are based purely on intrinsic structural transformations.
|Item Type:||Journal Article|
|Additional Information:||Copy right of this article belongs to The American Physical Society.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit|
|Date Deposited:||19 Jan 2010 06:33|
|Last Modified:||18 Feb 2013 09:47|
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