Parthasarathy, G and Asokan, S and Titus, SSK and Krishna, RR (1988) Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure. In: Physics Letters A, 131 (7-8). pp. 441-444.
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Abstract
Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copy rights of this article belongs to Elsevier Science. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) |
| Date Deposited: | 01 Feb 2010 09:38 |
| Last Modified: | 19 Sep 2010 05:39 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/21894 |
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