Prasad, MVN and Parthasarathy, G and Gopal, ESR and Asokan, S (1984) Pressure-induced electronic and structural transformations in bulk gese2 glass. In: Pramana, 23 (1). pp. 31-37.
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The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using he x-ray diffractometer and is found to be crystalline, with a face-centered cubic structure having a =4.06A. The electrical conductivity has also been studied as a function of temperature at various pressures.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to Indian Academy of Sciences.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||01 Feb 2010 09:24|
|Last Modified:||19 Sep 2010 05:39|
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