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Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure

Parthasarathy, G and Gopal, ESR (1984) Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure. In: Journal of Physics and Chemistry of Solids, 45 (11-12). pp. 1189-1194.

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Abstract

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Item Type: Journal Article
Additional Information: The copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 Aug 2009 11:17
Last Modified: 19 Sep 2010 05:40
URI: http://eprints.iisc.ernet.in/id/eprint/22054

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