Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques

Bhatia, KL and Sharma, AK and Gopal, ESR and Parthasarathy, G (1984) Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques. In: Solid State Communications, 51 (9). pp. 739-742.

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Abstract

An investigation of the problem of controlled doping of amorphous chalcogenide semiconductors utilizing a Bridgman anvil high pressure technique, has been undertaken. Bulk amorphous semiconducting materials (GeSe3.5)100-x doped with M = Bi (x = 2, 4, 10) and M = Sb (x = 10) respectively are studied up to a pressure of 100 kbar down to liquid nitrogen temperature, with a view to observe the impurity induced modifications. Measurement of the electrical conductivity of the doped samples under quasi-hydrostatic pressure reveals that the pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x = 4, 10) semiconductors are markedly different. The pressure effects in Sb-doped semiconductors are quite different from those in Bi-doped material.

Item Type:	Journal Article
Additional Information:	Copyright for this article belongs to Elsevier Science.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	28 Jan 2010 10:58
Last Modified:	19 Sep 2010 05:41
URI:	http://eprints.iisc.ernet.in/id/eprint/22417

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