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Normal ferroelectric to relaxor behavior in laser ablated Ca-doped barium titanate thin films

Victor, P and Ranjith, R and Krupanidhi, SB (2003) Normal ferroelectric to relaxor behavior in laser ablated Ca-doped barium titanate thin films. In: Journal of Applied Physics, 94 (12). pp. 7702-7709.

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Abstract

Ba1–xCaxTiO3 thin films (x = 0.05 to 0.17) were deposited on Pt-coated Si substrates using a pulsed excimer laser ablation technique. X-ray diffraction and scanning electron microscope studies of the Ba1–xCaxTiO3 targets exhibit a polycrystalline nature and thin films also show the same but with a significant orientation along the (111) direction. Secondary ion mass spectrometer analysis reveals the presence of a sharper interface existing at the thin film substrate. The dielectric phase transition temperature of (Ba1–xCax)TiO3 targets were sharp and the transition temperature was found to decrease from 140 °C to 110 °C with an increase in the values of x (x>0.05 at. %). The laser ablated Ca-doped BaTiO3 thin films deposited at 100 mTorr exhibited a higher dielectric constant, lower dielectric loss, and an anomalous decrease in phase transition was observed. The anomalous phase transition decrease was ascribed to the occupancy of the Ca2+ in the Ti4+ site. There was a cross over from the sharp to diffused phase transition for a higher composition of Ca (>9 at. %) in BaTiO3 thin films. The diffuse transition behavior might be due to the larger number of the Ca2+ ions occupying the Ti4+ site, eventually introducing larger compositional and structural disorder and this occupancy leads to the generation of oxygen vacancies. The activation energy obtained from impedance spectroscopy was 1.05 eV, and was attributed to the oxygen vacancy motion.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to American Institute of Physics (AIP).
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 03 Nov 2004
Last Modified: 19 Sep 2010 04:17
URI: http://eprints.iisc.ernet.in/id/eprint/2244

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