Asokan, S and Parthasarathy, G and Gopal, ESR (1986) Evidence for a new metastable crystalline compound in Ge---Te system. In: Materials Research Bulletin, 21 (2). 217 -224.
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Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100−x glasses (15 less-than-or-equals, slant x less-than-or-equals, slant 28) has been studied up to 8GPa pressure. All the glasses exhibit a sharp, discontinuous glass to crystal transition under pressure. The high pressure crystalline phases are identified to have a face centered cubic structure. The value of the cell constant is 0.779nm for 15 less-than-or-equals, slant x less-than-or-equals, slant 17, 0.642nm for x=20 and 0.55lnm for 22 ≤ x ≤ 28 samples respectively. The cell constants of the high pressure crystalline phases suggest the possible existance of a new metastable crystalline compound in the Ge---Te system with F.C.C. structure and cell constant equal to 1.109nm as reported by Moore et al.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||GexTe100−x alloys;Amorphous semiconductors;chalcogenide glasses.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||01 Sep 2009 05:55|
|Last Modified:||19 Sep 2010 05:43|
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