Asokan, S and Gopal, ESR and Parthasarathy, G (1986) Pressure-induced polymorphous crystallization in bulk Si20Te80 glass. In: Journal of Materials Science, 21 (2). pp. 625-629.
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The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Springer.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||27 Jan 2010 06:49|
|Last Modified:||19 Sep 2010 05:43|
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